Datasheet > IPG20N06S2L65AUMA1

IPG20N06S2L65AUMA1

更新时间： 2024-11-21 07:01:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	162K
描述
Power Field-Effect Transistor, 20A I(D), 55V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

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IPG20N06S2L-65

OptiMOS^®Power-Transistor

Product Summary

V_DS

mΩ

R _DS(on),max

I _D

Features

• Dual N-channel Logic Level - Enhancement mode

PG-TDSON-8-4

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPG20N06S2L-65

PG-TDSON-8-4 2N06L65

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current

one channel active¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C, V_GS=10 V

Pulsed drain current¹⁾

one channel active

I _D,pulse

Avalanche energy, single pulse^{1, 3)}

Avalanche current, single pulse³⁾

Gate source voltage

E_AS

I _AS

I _D=10A

V_GS

±20

Power dissipation

one channel active

P_tot

T _C=25 °C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 1.0

page 1

2009-09-07

12 3 4 5 6 7...9

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