Datasheet > HGTG20N60A4

HGTG20N60A4

更新时间： 2024-09-13 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体开关晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
9页	356K
描述
600V, SMPS Series N-Channel IGBTs

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HGTG20N60A4 数据手册

HGTG20N60A4, HGTP20N60A4

Data Sheet

October 1999

File Number 4781.1

600V, SMPS Series N-Channel IGBTs

Features

The HGTG20N60A4 and HGTP20N60A4 are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have

the high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• >100kHz Operation at 390V, 20A

• 200kHz Operation at 390V, 12A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T = 125 C

on-state voltage drop varies only moderately between 25 C

• Low Conduction Loss

and 150 C.

• Temperature Compensating SABER™ Model

www.intersil.com

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power

supplies.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Formerly Developmental Type TA49339.

Packaging

JEDEC TO-220AB ALTERNATE VERSION

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-247

BRAND

20N60A4

COLLECTOR

(FLANGE)

HGTP20N60A4

HGTG20N60A4

NOTE: When ordering, use the entire part number.

Symbol

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7...9

中文翻译

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HGTG20N60A4 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PF50WDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTG20N60A4相关器件

型号	品牌	获取价格	描述	数据表
HGTG20N60A4D	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60A4D	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60A4D	ONSEMI	获取价格	600V，SMPS IGBT
HGTG20N60A4D_09	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60A4D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, LEAD FREE P
HGTG20N60B3	FAIRCHILD	获取价格	40A, 600V, UFS Series N-Channel IGBTs
HGTG20N60B3	INTERSIL	获取价格	40A, 600V, UFS Series N-Channel IGBTs
HGTG20N60B3	ONSEMI	获取价格	600V，PT IGBT
HGTG20N60B3_NL	FAIRCHILD	获取价格	暂无描述
HGTG20N60B3D	FAIRCHILD	获取价格	40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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