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HGTG20N60B3D PDF预览

HGTG20N60B3D

更新时间: 2024-09-30 22:51:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体二极管晶体管电动机控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
7页 180K
描述
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG20N60B3D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:3.73Is Samacsys:N
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):40 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):175 ns
门极发射器阈值电压最大值:6 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):165 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):360 ns
标称接通时间 (ton):45 nsBase Number Matches:1

HGTG20N60B3D 数据手册

 浏览型号HGTG20N60B3D的Datasheet PDF文件第2页浏览型号HGTG20N60B3D的Datasheet PDF文件第3页浏览型号HGTG20N60B3D的Datasheet PDF文件第4页浏览型号HGTG20N60B3D的Datasheet PDF文件第5页浏览型号HGTG20N60B3D的Datasheet PDF文件第6页浏览型号HGTG20N60B3D的Datasheet PDF文件第7页 
HGTG20N60B3D  
Data Sheet  
December 2001  
40A, 600V, UFS Series N-Channel IGBT  
with Anti-Parallel Hyperfast Diode  
Features  
o
• 40A, 600V at T = 25 C  
C
The HGTG20N60B3D is a MOS gated high voltage  
switching device combining the best features of MOSFETs  
and bipolar transistors. The device has the high input  
impedance of a MOSFET and the low on-state conduction  
loss of a bipolar transistor. The much lower on-state voltage  
o
Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150 C  
• Short Circuit Rated  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
o
o
drop varies only moderately between 25 C and 150 C. The  
diode used in anti-parallel with the IGBT is the RHRP3060.  
Packaging  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential.  
JEDEC STYLE TO-247  
E
C
G
Formerly developmental type TA49016.  
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
G20N60B3D  
HGTG20N60B3D  
TO-247  
COLLECTOR  
(BOTTOM SIDE METAL)  
NOTE: When ordering, use the entire part number.  
Symbol  
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTG20N60B3D Rev. B  

HGTG20N60B3D 替代型号

型号 品牌 替代类型 描述 数据表
HGTG20N60B3D ONSEMI

类似代替

600V,PT IGBT
STGW20NC60VD STMICROELECTRONICS

功能相似

N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT

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