Datasheet > HGTG20N60B3D

HGTG20N60B3D

更新时间： 2024-11-24 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
6页	138K
描述
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG20N60B3D 数据手册

HGTG20N60B3D

Data Sheet

January 2000

File Number 3739.6

40A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 40A, 600V at T = 25 C

The HGTG20N60B3D is a MOS gated high voltage

switching device combining the best features of MOSFETs

and bipolar transistors. The device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state

• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150 C

• Short Circuit Rated

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

voltage drop varies only moderately between 25 C and

150 C. The diode used in anti-parallel with the IGBT is the

Packaging

RHRP3060.

JEDEC STYLE TO-247

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential.

Formerly developmental type TA49016.

Ordering Information

PART NUMBER

PACKAGE

BRAND

G20N60B3D

HGTG20N60B3D

TO-247

COLLECTOR

(BOTTOM SIDE METAL)

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6

中文翻译

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HGTG20N60B3D 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PF50WDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTG20N60B3D相关器件

型号	品牌	获取价格	描述	数据表
HGTG20N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG20N60C3	INTERSIL	获取价格	45A, 600V, UFS Series N-Channel IGBT
HGTG20N60C3	FAIRCHILD	获取价格	45A, 600V, UFS Series N-Channel IGBT
HGTG20N60C3D	FAIRCHILD	获取价格	45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60C3D	INTERSIL	获取价格	45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-247, LEAD FREE P
HGTG20N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG20N60C3R	FAIRCHILD	获取价格	40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTG24N60D1	INTERSIL	获取价格	24A, 600V N-Channel IGBT
HGTG24N60D1D	INTERSIL	获取价格	24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

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