Datasheet > HGTG27N120BN

HGTG27N120BN

更新时间： 2024-09-30 22:11:15

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管功率控制瞄准线双极性晶体管局域网
页数	文件大小	规格书
7页	86K
描述
72A, 1200V, NPT Series N-Channel IGBT

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HGTG27N120BN 数据手册

HGTG27N120BN

Data Sheet

January 2000

File Number 4482.3

72A, 1200V, NPT Series N-Channel IGBT

Features

The HGTG27N120BN is a Non-Punch Through (NPT) IGBT

design. This is a new member of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor.

• 72A, 1200V, T = 25 C

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

• Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.intersil.com

• Avalanche Rated

Formerly Developmental Type TA49280.

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER

PACKAGE

BRAND

G27N120BN

HGTG27N120BN

TO-247

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7

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HGTG27N120BN 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PF50WDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTG27N120BN相关器件

型号	品牌	获取价格	描述	数据表
HGTG27N120BN_04	FAIRCHILD	获取价格	72A, 1200V, NPT Series N-Channel IGBT
HGTG27N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG27N60C3DR	ROCHESTER	获取价格	54A, 600V, N-CHANNEL IGBT, TO-247
HGTG27N60C3R	ROCHESTER	获取价格	54A, 600V, N-CHANNEL IGBT, TO-247
HGTG30N120CN	FAIRCHILD	获取价格	75A, 1200V, NPT Series N-Channel IGBT
HGTG30N120CN	INTERSIL	获取价格	75A, 1200V, NPT Series N-Channel IGBT
HGTG30N120D2	INTERSIL	获取价格	30A, 1200V N-Channel IGBT
HGTG30N60	MICROSS	获取价格	Insulated Gate Bipolar Transistor
HGTG30N60A4	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT
HGTG30N60A4	ONSEMI	获取价格	IGBT，600V，SMPS

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