生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.68 | 其他特性: | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 54 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JEDEC-95代码: | TO-247 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | COMMERCIAL | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 250 ns | 标称接通时间 (ton): | 38 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGTG27N60C3R | ROCHESTER |
获取价格 |
54A, 600V, N-CHANNEL IGBT, TO-247 | |
HGTG30N120CN | FAIRCHILD |
获取价格 |
75A, 1200V, NPT Series N-Channel IGBT | |
HGTG30N120CN | INTERSIL |
获取价格 |
75A, 1200V, NPT Series N-Channel IGBT | |
HGTG30N120D2 | INTERSIL |
获取价格 |
30A, 1200V N-Channel IGBT | |
HGTG30N60 | MICROSS |
获取价格 |
Insulated Gate Bipolar Transistor | |
HGTG30N60A4 | INTERSIL |
获取价格 |
600V, SMPS Series N-Channel IGBT | |
HGTG30N60A4 | ONSEMI |
获取价格 |
IGBT,600V,SMPS | |
HGTG30N60A4 | FAIRCHILD |
获取价格 |
600V, SMPS Series N-Channel IGBT | |
HGTG30N60A4D | FAIRCHILD |
获取价格 |
600V, SMPS Series N-Channel IGBT with | |
HGTG30N60A4D | INTERSIL |
获取价格 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |