HGTG30N120D2
30A, 1200V N-Channel IGBT
April 1995
Features
Package
JEDEC STYLE TO-247
• 30A, 1200V
• Latch Free Operation
• Typical Fall Time - 580ns
• High Input Impedance
• Low Conduction Loss
EMITTER
COLLECTOR
GATE
COLLECTOR
(BOTTOM SIDE
METAL)
Description
The HGTG30N120D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
The IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
C
PACKAGING AVAILABILITY
G
PART NUMBER
PACKAGE
BRAND
HGTG30N120D2
TO-247
G30N120D2
E
Formerly Developmental Type TA49010
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTG30N120D2
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
1200
1200
50
V
V
A
A
A
V
V
-
CES
Collector-Gate Voltage, R =1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
CGR
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C25
o
at V =15V at T = +90 C . . . . . . . . . . . . . . . . . . . . I
30
GE
C
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
200
±20
±30
CM
GES
GEM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
Switching Safe Operating Area at T = +150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
200A at 0.8 BV
J
o
CES
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
208
W
C
D
o
o
Power Dissipation Total Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T
-55 to +150
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
260
6
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V = 15V . . . . . . . . . . . . . . . . . . . . . . . . . t
µS
µS
GE
at V = 10V . . . . . . . . . . . . . . . . . . . . . . . . . t
15
GE
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
= 720V, T = +125 C, R = 25Ω.
C GE
CE(PEAK)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 2834.2
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