Datasheet > HGTG30N60

HGTG30N60

更新时间： 2024-10-01 21:01:51

品牌	Logo	应用领域
MICROSS		栅
页数	文件大小	规格书
4页	373K
描述
Insulated Gate Bipolar Transistor

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数据手册

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HGTG30N60 数据手册

600V Planar IGBT Chip

HGTG30N60

600V, 60A, V_CE(sat)= 1.8V

Part

V_CES

I_Cn

V_{CE (sat) Typ}

1.8

Die Size

6.6 x 6.6 mm²

HGTG30N60

600V

60A

See page 2 for ordering part numbers & supply formats

Applications

Features



AC & DC Motor Controls

General Purpose Inverters



Fast Switching & Low Conduction Loss



High Input Impedance

Short Circuit Rated

Maximum Ratings

Symbol

BV_CES

V_GES

Parameter

Ratings

600

Units

Collector to Emitter Voltage

Gate to Emitter Voltage

±20

I_C

Drain Current¹

Continuous (T_C= 25°C)

Continuous (T_C= 110°C)

Pulsed Collector Current

V_CE= 360V, R_G= 3Ω, V_GE= 10V, T_C= 125°C

Operation Junction & Storage Temperature

I_CM

240

SCWT

T_J, T_STG

Short Circuit Withstand Time³

µS

°C

-55 to 150

Static Characteristics, T_J= 25° unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BV_CES

I_CES

Collector to Emitter Breakdown Voltage

V_GE= 0V, I_C= 250µA

T_J= 25^oC

600

250

4.0

µA

Collector Cut-Off Current

G-E Leakage Current

V_CE= 600

T_J= 125^oC

I_GES

V_GE= ±20

±250

Notes:

1. Defined by chip design, not subject to 100% production test at wafer level

2. Performance will vary based on assembly technique and substrate choice

3. Repetitive Rating: Pulse width limited by maximum junction temperature

Further Information - Contact your Micross sales office or email your enquiry to baredie@micross.com

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