HGTG27N120BN / HGT5A27N120BN
Data Sheet
October 2004
72A, 1200V, NPT Series N-Channel IGBT
Features
o
The HGTG27N120BN and HGT5A27N120BN are Non-
Punch Through (NPT) IGBT design. This is a new member
of the MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
• 72A, 1200V, T = 25 C
C
• 1200V Switching SOA Capability
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• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Avalanche Rated
Packaging
Formerly Developmental Type TA49280.
JEDEC STYLE TO-247
E
C
Ordering Information
COLLECTOR
G
(BOTTOM SIDE
METAL)
PART NUMBER
HGTG27N120BN
HGT5A27N120BN
PACKAGE
TO-247
TO-247-ST
BRAND
G27N120BN
27N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
JEDEC STYLE TO-247-ST
G
E
C
COLLECTOR
(BOTTOM SIDE
METAL)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2004 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C2