5秒后页面跳转
捷配首页

Datasheet > HGTG24N60D1D
HGTG24N60D1D PDF预览

HGTG24N60D1D

更新时间： 2024-09-30 22:51:19
品牌 Logo 应用领域
英特矽尔 - INTERSIL 二极管双极性晶体管
页数 文件大小 规格书
5页 39K
描述
24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

阅读下载

中文翻译

获取价格

HGTG24N60D1D 数据手册

 浏览型号HGTG24N60D1D的Datasheet PDF文件第2页浏览型号HGTG24N60D1D的Datasheet PDF文件第3页浏览型号HGTG24N60D1D的Datasheet PDF文件第4页浏览型号HGTG24N60D1D的Datasheet PDF文件第5页 
HGTG24N60D1D  
24A, 600V N-Channel IGBT  
with Anti-Parallel Ultrafast Diode  
April 1995  
Features  
Package  
JEDEC STYLE TO-247  
• 24A, 600V  
EMITTER  
COLLECTOR  
GATE  
• Latch Free Operation  
• Typical Fall Time <500ns  
• Low Conduction Loss  
• With Anti-Parallel Diode  
• tRR < 60ns  
COLLECTOR  
(BOTTOM SIDE  
METAL)  
Description  
The IGBT is a MOS gated high voltage switching device  
combining the best features of MOSFETs and bipolar  
transistors. The device has the high input impedance of a  
MOSFET and the low on-state conduction loss of a bipolar  
transistor. The much lower on-state voltage drop varies only  
moderately between +25oC and +150oC. The diode used in  
parallel with the IGBT is an ultrafast (tRR < 60ns) with soft  
recovery characteristic.  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
C
G
The IGBTs are ideal for many high voltage switching applica-  
tions operating at frequencies where low conduction losses  
are essential, such as: AC and DC motor controls, power  
supplies and drivers for solenoids, relays and contactors.  
E
PACKAGING AVAILABILITY  
PACKAGE  
PART NUMBER  
BRAND  
G24N60D1D  
HGTG24N60D1D  
TO-247  
NOTE: When ordering, use the entire part number.  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specific  
C
HGTG24N60D1D  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
600  
600  
40  
V
V
A
A
A
V
-
CES  
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
GE  
CGR  
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
C25  
o
at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
24  
C
C90  
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
96  
CM  
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±25  
GES  
o
Switching Safe Operating Area at T = +150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA  
60A at 0.8 BV  
J
CES  
o
Diode Forward Current at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
40  
24  
A
A
W
C
F25  
F90  
o
at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
C
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
125  
1.0  
C
D
o
o
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T  
-55 to +150  
260  
C
J
STG  
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
(0.125 inch from case for 5s)  
C
L
NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 2797.4  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19939-107  
12345

中文翻译

下载PDF

与HGTG24N60D1D相关器件

型号 品牌 获取价格 描述 数据表
HGTG27N120BN ONSEMI

获取价格

 		1200V，NPT IGBT
HGTG27N120BN FAIRCHILD

获取价格

 		72A, 1200V, NPT Series N-Channel IGBT
HGTG27N120BN INTERSIL

获取价格

 		72A, 1200V, NPT Series N-Channel IGBT
HGTG27N120BN_04 FAIRCHILD

获取价格

 		72A, 1200V, NPT Series N-Channel IGBT
HGTG27N60C3DR FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG27N60C3DR ROCHESTER

获取价格

 		54A, 600V, N-CHANNEL IGBT, TO-247
HGTG27N60C3R ROCHESTER

获取价格

 		54A, 600V, N-CHANNEL IGBT, TO-247
HGTG30N120CN FAIRCHILD

获取价格

 		75A, 1200V, NPT Series N-Channel IGBT
HGTG30N120CN INTERSIL

获取价格

 		75A, 1200V, NPT Series N-Channel IGBT
HGTG30N120D2 INTERSIL

获取价格

 		30A, 1200V N-Channel IGBT

与HGTG24N60D1D相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证