Datasheet > 晶体管 > IGBT> HGTG20N60C3DR

HGTG20N60C3DR

更新时间： 2024-10-01 13:08:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关电动机控制瞄准线双极性晶体管局域网
页数	文件大小	规格书
8页	144K
描述
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-247

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技术参数
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HGTG20N60C3DR 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.11
Is Samacsys：	N	其他特性：	LOW CONDUCTION LOSS
最大集电极电流 (IC)：	45 A	集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE	JEDEC-95代码：	TO-247
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	388 ns
标称接通时间 (ton)：	52 ns	Base Number Matches：	1

HGTG20N60C3DR 数据手册

HGTG20N60C3, HGTP20N60C3,

HGT1S20N60C3S

Data Sheet

December 2001

45A, 600V, UFS Series N-Channel IGBT

Features

This family of MOS gated high voltage switching devices

combining the best features of MOSFETs and bipolar

transistors. These devices have the high input impedance of

a MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

• 45A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Related Literature

moderately between 25 C and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

Formerly developmental type TA49178.

JEDEC STYLE TO-247

Ordering Information

PART NUMBER

PACKAGE

BRAND

G20N60C3

HGTG20N60C3

TO-247

HGTP20N60C3

TO-220AB

TO-263AB

G20N60C3

COLLECTOR

(FLANGE)

HGT1S20N60C3S

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in the tape and reel, i.e.,

HGT1S20N60C3S9A.

JEDEC TO-220AB (ALTERNATE VERSION)

Symbol

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

12 3 4 5 6 7 8

中文翻译

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与HGTG20N60C3DR相关器件

型号	品牌	获取价格	描述	数据表
HGTG20N60C3R	FAIRCHILD	获取价格	40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTG24N60D1	INTERSIL	获取价格	24A, 600V N-Channel IGBT
HGTG24N60D1D	INTERSIL	获取价格	24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
HGTG27N120BN	ONSEMI	获取价格	1200V，NPT IGBT
HGTG27N120BN	FAIRCHILD	获取价格	72A, 1200V, NPT Series N-Channel IGBT
HGTG27N120BN	INTERSIL	获取价格	72A, 1200V, NPT Series N-Channel IGBT
HGTG27N120BN_04	FAIRCHILD	获取价格	72A, 1200V, NPT Series N-Channel IGBT
HGTG27N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG27N60C3DR	ROCHESTER	获取价格	54A, 600V, N-CHANNEL IGBT, TO-247
HGTG27N60C3R	ROCHESTER	获取价格	54A, 600V, N-CHANNEL IGBT, TO-247

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