Datasheet > HGTG20N60A4D

HGTG20N60A4D

更新时间： 2024-10-02 11:15:47

品牌	Logo	应用领域
安森美 - ONSEMI		局域网电动机控制栅瞄准线双极性晶体管
页数	文件大小	规格书
10页	385K
描述
600V，SMPS IGBT

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中文翻译

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数据手册
替代型号

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HGTG20N60A4D 数据手册

SMPS Series N-Channel

IGBT with Anti-Parallel

Hyperfast Diode

600 V

HGTG20N60A4D

www.onsemi.com

The HGTG20N60A4D is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. This device has the high input impedance of a MOSFET

and the low on−state conduction loss of a bipolar transistor. The much

lower on−state voltage drop varies only moderately between 25°C and

150°C. The IGBT used is the development type TA49339. The diode

used in anti−parallel is the development type TA49372.

This IGBT is ideal for many high voltage switching applications

operating at high frequencies where low conduction losses are

essential. This device has been optimized for high frequency switch

mode power supplies.

Formerly Developmental Type TA49341.

COLLECTOR

(FLANGE)

Features

• >100 kHz Operation 390 V, 20 A

• 200 kHz Operation 390 V, 12 A

• 600 V Switching SOA Capability

TO−247−3LD SHORT LEAD

CASE 340CK

JEDEC STYLE

• Typical Fall Time 55 ns at T = 125°C

MARKING DIAGRAM

• Low Conduction Loss

• Temperature Compensating Saber™ Model

• This is a Pb−Free Device

$Y&Z&3&K

20N60A4D

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

20N60A4D = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 8 of

this data sheet.

Publication Order Number:

April, 2020 − Rev. 3

HGTG20N60A4D/D

12 3 4 5 6 7...10

中文翻译

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HGTG20N60A4D 替代型号

型号	品牌	替代类型	描述	数据表
HGTG40N60B3	ONSEMI	完全替代	600V，PT IGBT
HGTG11N120CND	ONSEMI	类似代替	1200 V NPT IGBT
HGTG20N60B3D	ONSEMI	类似代替	600V，PT IGBT

与HGTG20N60A4D相关器件

型号	品牌	获取价格	描述	数据表
HGTG20N60A4D_09	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60A4D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, LEAD FREE P
HGTG20N60B3	FAIRCHILD	获取价格	40A, 600V, UFS Series N-Channel IGBTs
HGTG20N60B3	INTERSIL	获取价格	40A, 600V, UFS Series N-Channel IGBTs
HGTG20N60B3	ONSEMI	获取价格	600V，PT IGBT
HGTG20N60B3_NL	FAIRCHILD	获取价格	暂无描述
HGTG20N60B3D	FAIRCHILD	获取价格	40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60B3D	INTERSIL	获取价格	40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60B3D	ONSEMI	获取价格	600V，PT IGBT
HGTG20N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247