是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.8 |
雪崩能效等级(Eas): | 80 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 7 A | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 45 W | 最大脉冲漏极电流 (IDM): | 28 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD9N25 | FAIRCHILD |
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250V N-Channel MOSFET | |
FQD9N25TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Me | |
FQD9N25TM | FAIRCHILD |
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250V N-Channel MOSFET | |
FQD9N25TM | ONSEMI |
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功率 MOSFET,N 沟道,QFET®, 250 V,7.4 A,420 mΩ,DPAK | |
FQD9N25TM-F080 | ONSEMI |
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功率 MOSFET,N 沟道,QFET®, 250 V,7.4 A,420 mΩ,DPAK | |
FQE | SCHURTER |
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Shock-safe Fuseholder, Solder Terminals, 5x20 mm | |
FQE10N20C | FAIRCHILD |
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200V N-Channel MOSFET | |
FQE10N20CTU | FAIRCHILD |
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Power Field-Effect Transistor, 4A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Meta | |
FQE10N20LC | FAIRCHILD |
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200V Logic N-Channel MOSFET | |
FQE10N20LCTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |