Datasheet > FQD9N25TM

FQD9N25TM

更新时间： 2024-09-13 11:10:55

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
11页	1074K
描述
功率 MOSFET，N 沟道，QFET®， 250 V，7.4 A，420 mΩ，DPAK

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FQD9N25TM 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	0.63
Is Samacsys：	N	雪崩能效等级（Eas）：	165 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	250 V	最大漏极电流 (Abs) (ID)：	7.4 A
最大漏极电流 (ID)：	7.4 A	最大漏源导通电阻：	0.42 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	55 W	最大脉冲漏极电流 (IDM)：	29.6 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FQD9N25TM 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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与FQD9N25TM相关器件

型号	品牌	获取价格	描述	数据表
FQD9N25TM-F080	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®， 250 V，7.4 A，420 mΩ，DPAK
FQE	SCHURTER	获取价格	Shock-safe Fuseholder, Solder Terminals, 5x20 mm
FQE10N20C	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQE10N20CTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Meta
FQE10N20LC	FAIRCHILD	获取价格	200V Logic N-Channel MOSFET
FQE10N20LCTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
FQG4902	FAIRCHILD	获取价格	250V Dual N & P-Channel MOSFET
FQG4904	FAIRCHILD	获取价格	400V Dual N & P-Channel MOSFET
FQG4904TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.46A I(D), 400V, 3ohm, 2-Element, N-Channel and P-Channel,
FQH140N10	FAIRCHILD	获取价格	100V N-Channel MOSFET

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