Datasheet > FQH44N10-133

FQH44N10-133

更新时间： 2024-09-12 14:42:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	406K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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FQH44N10-133 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.68
Base Number Matches：	1

FQH44N10-133 数据手册

MOSFET – N-Channel, QFET⁾

100 V, 48 A, 39 mW

FQH44N10

Description

This N−Channel enhancement mode power MOSFET is produced

using ON Semiconductor’s proprietary planar stripe and DMOS

technology. This advanced MOSFET technology has been especially

tailored to reduce on−state resistance, and to provide superior

switching performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies, audio

amplifier, DC motor control, and variable switching power

applications.

www.onsemi.com

MAX

I MAX

DSS

DS(ON)

100 V

39 mW @ 10 V

48 A

Features

• 48 A, 100 V, R

= 39 mW (Max.) @ V = 10 V,

DS(on)

I = 24 A

• Low Gate Charge (Typ. 48 nC)

• Low Crss (Typ. 85 pF)

• 100% Avalanche Tested

• 175°C Maximum Junction Temperature Rating

POWER MOSFET

TO−247−3LD

CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K

FQH

44N10

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FQH44N10

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2020 − Rev. 4

FQH44N10/D

12 3 4 5 6 7...9

中文翻译

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