是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-262AA |
包装说明: | I2PAK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.33 |
雪崩能效等级(Eas): | 520 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 11.4 A |
最大漏源导通电阻: | 0.48 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | NOT APPLICABLE |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 46 A | 认证状态: | COMMERCIAL |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI11P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQI11P06TU | ROCHESTER |
获取价格 |
11.4A, 60V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI11P06TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, M | |
FQI12N20 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 11.6A I(D) | TO-262AA | |
FQI12N20L | FAIRCHILD |
获取价格 |
200V LOGIC N-Channel MOSFET | |
FQI12N20TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, M | |
FQI12N50 | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET | |
FQI12N60 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQI12N60C | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQI12N60CTU | ROCHESTER |
获取价格 |
12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3 |