FQI11P06

更新时间： 2024-09-14 22:25:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	663K
描述
60V P-Channel MOSFET

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中文翻译

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数据手册

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FQI11P06 数据手册

May 2001

QFET

FQB11P06 / FQI11P06

60V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

DC/DC converters, and high efficiency switching for power

management in portable and battery operated products.

•

-11.4A, -60V, R

= 0.175Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 13 nC)

Low Crss ( typical 45 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

●

▶

▲

●

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB11P06 / FQI11P06

Units

Drain-Source Voltage

-60

-11.4

-8.05

-45.6

± 25

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

160

-11.4

5.3

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

-7.0

Power Dissipation (T = 25°C) *

3.13

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.35

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.85

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A4. May 2001

12 3 4 5 6 7...9

中文翻译

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与FQI11P06相关器件

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FQI11P06TU	ROCHESTER	获取价格	11.4A, 60V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
FQI11P06TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, M
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FQI12N50	FAIRCHILD	获取价格	500V N-Channel MOSFET
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