FQI13N10L

更新时间： 2024-09-14 22:32:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	567K
描述
100V LOGIC N-Channel MOSFET

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数据手册

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FQI13N10L 数据手册

December 2000

QFET

FQB13N10L / FQI13N10L

100V LOGIC N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

12.8A, 100V, R

= 0.18Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 8.7 nC)

Low Crss ( typical 20 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as high

efficiency switching DC/DC converters, and DC motor

control.

175°C maximum junction temperature rating

! "

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB13N10L / FQI13N10L

Units

Drain-Source Voltage

100

12.8

9.05

51.2

± 20

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

12.8

6.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

6.0

Power Dissipation (T = 25°C) *

3.75

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.43

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.31

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A4, December 2000

12 3 4 5 6 7...9

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