Datasheet > FQI17P06

FQI17P06

更新时间： 2024-11-03 22:09:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	692K
描述
60V P-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQI17P06 数据手册

May 2001

QFET

FQB17P06 / FQI17P06

60V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

DC/DC converters, and high efficiency switching for power

management in portable and battery operated products.

•

-17A, -60V, R

= 0.12Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 21 nC)

Low Crss ( typical 80 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

●

▶

▲

●

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB17P06 / FQI17P06

Units

Drain-Source Voltage

-60

-17

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-12

(Note 1)

Drain Current

- Pulsed

-68

Gate-Source Voltage

± 25

300

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

-17

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

7.9

V/ns

dv/dt

-7.0

Power Dissipation (T = 25°C) *

3.75

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.53

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.9

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A2. May 2001

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQI17P06相关器件

型号	品牌	获取价格	描述	数据表
FQI17P06TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 17A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Meta
FQI17P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQI17P10TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, M
FQI19N10	FAIRCHILD	获取价格	100V N-Channel MOSFET
FQI19N10L	FAIRCHILD	获取价格	100V LOGIC N-Channel MOSFET
FQI19N10LTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 19A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
FQI19N10TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
FQI19N20	FAIRCHILD	获取价格	200V N-CHANNEL MOSFET
FQI19N20C	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQI19N20L	FAIRCHILD	获取价格	200V LOGIC N_Channel MOSFET