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FQI27P06TU PDF预览

FQI27P06TU

更新时间: 2024-11-18 12:58:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 702K
描述
Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

FQI27P06TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:I2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.74
雪崩能效等级(Eas):560 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):27 A
最大漏极电流 (ID):27 A最大漏源导通电阻:0.07 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):120 W
最大脉冲漏极电流 (IDM):108 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQI27P06TU 数据手册

 浏览型号FQI27P06TU的Datasheet PDF文件第2页浏览型号FQI27P06TU的Datasheet PDF文件第3页浏览型号FQI27P06TU的Datasheet PDF文件第4页浏览型号FQI27P06TU的Datasheet PDF文件第5页浏览型号FQI27P06TU的Datasheet PDF文件第6页浏览型号FQI27P06TU的Datasheet PDF文件第7页 
May 2001  
TM  
QFET  
FQB27P06 / FQI27P06  
60V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand a high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as automotive,  
DC/DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
-27A, -60V, R  
= 0.07@V = -10 V  
DS(on) GS  
Low gate charge ( typical 33 nC)  
Low Crss ( typical 120 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
S
!
D
G!  
G
S
D2-PAK  
FQB Series  
I2-PAK  
FQI Series  
G
D
S
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB27P06 / FQI27P06  
Units  
V
V
I
Drain-Source Voltage  
-60  
-27  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
-19.1  
-108  
± 25  
560  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
-27  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
12  
mJ  
V/ns  
W
AR  
dv/dt  
-7.0  
Power Dissipation (T = 25°C) *  
3.75  
120  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.8  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.25  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. A2. May 2001  

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