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FQI28N15TU PDF预览

FQI28N15TU

更新时间: 2024-11-04 13:00:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 630K
描述
Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

FQI28N15TU 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-262包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
Is Samacsys:N雪崩能效等级(Eas):300 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):28 A最大漏极电流 (ID):28 A
最大漏源导通电阻:0.09 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):168 W最大脉冲漏极电流 (IDM):112 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQI28N15TU 数据手册

 浏览型号FQI28N15TU的Datasheet PDF文件第2页浏览型号FQI28N15TU的Datasheet PDF文件第3页浏览型号FQI28N15TU的Datasheet PDF文件第4页浏览型号FQI28N15TU的Datasheet PDF文件第5页浏览型号FQI28N15TU的Datasheet PDF文件第6页浏览型号FQI28N15TU的Datasheet PDF文件第7页 
December 2000  
TM  
QFET  
FQB28N15 / FQI28N15  
150V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
28A, 150V, R  
= 0.09@V = 10 V  
DS(on) GS  
Low gate charge ( typical 40 nC)  
Low Crss ( typical 50 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology is especially tailored to minimize  
on-state  
resistance,  
provide  
superior  
switching  
performance, and withstand high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as audio  
amplifiers, high efficiency switching for DC/DC converters,  
DC motor control, and uninterrupted power supplies.  
175°C maximum junction temperature rating  
D
!
D
"
! "  
"
!
G
"
G
S
D2-PAK  
FQB Series  
I2-PAK  
FQI Series  
G
D
S
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB28N15 / FQI28N15  
Units  
V
V
I
Drain-Source Voltage  
150  
28  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
19.8  
112  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
300  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
28  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
16.8  
5.5  
mJ  
V/ns  
W
AR  
dv/dt  
Power Dissipation (T = 25°C) *  
3.75  
168  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.12  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
0.89  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2000 Fairchild Semiconductor International  
Rev. A2, December 2000  

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