Datasheet > FQI2P25

FQI2P25

更新时间： 2024-11-17 22:25:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	561K
描述
250V P-Channel MOSFET

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FQI2P25 数据手册

April 2000

QFET

FQB2P25 / FQI2P25

250V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters.

•

-2.3A, -250V, R

= 4.0Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 6.5 nC)

Low Crss ( typical 6.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

ꢀ

G_!

ꢁ

ꢀ

D²-PAK

FQB Series

I²-PAK

FQI Series

ꢀ

Absolute Maximum Ratings

ꢀꢀ

T = 25°C unless otherwise noted

Symbol

Parameter

FQB2P25 / FQI2P25

Units

Drain-Source Voltage

-250

-2.3

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-1.45

-9.2

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

±ꢀ30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

120

-2.3

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.2

V/ns

dv/dt

-5.5

Power Dissipation (T = 25°C) *

3.13

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.42

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8ꢀ from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.4

Units

°CꢁW

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, April 2000

12 3 4 5 6 7...9

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