是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, I2PAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.35 | 雪崩能效等级(Eas): | 439 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 120 V |
最大漏极电流 (Abs) (ID): | 32 A | 最大漏极电流 (ID): | 32 A |
最大漏源导通电阻: | 0.05 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 150 W | 最大脉冲漏极电流 (IDM): | 128 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI32N20C | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
FQI33N10 | FAIRCHILD |
获取价格 |
100V N-Channel MOSFET | |
FQI33N10L | FAIRCHILD |
获取价格 |
100V LOGIC N-Channel MOSFET | |
FQI33N10TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me | |
FQI34N20 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
FQI34N20L | FAIRCHILD |
获取价格 |
200V LOGIC N-Channel MOSFET | |
FQI34P10 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET | |
FQI34P10TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, M | |
FQI34P10TU_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, M | |
FQI3N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET |