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FQI32N12V2TU PDF预览

FQI32N12V2TU

更新时间: 2024-11-18 13:07:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 650K
描述
Power Field-Effect Transistor, 32A I(D), 120V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, I2PAK-3

FQI32N12V2TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, I2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.35雪崩能效等级(Eas):439 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:120 V
最大漏极电流 (Abs) (ID):32 A最大漏极电流 (ID):32 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):128 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQI32N12V2TU 数据手册

 浏览型号FQI32N12V2TU的Datasheet PDF文件第2页浏览型号FQI32N12V2TU的Datasheet PDF文件第3页浏览型号FQI32N12V2TU的Datasheet PDF文件第4页浏览型号FQI32N12V2TU的Datasheet PDF文件第5页浏览型号FQI32N12V2TU的Datasheet PDF文件第6页浏览型号FQI32N12V2TU的Datasheet PDF文件第7页 
®
QFET  
FQB32N12V2/FQI32N12V2  
120V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for DC to DC converters, sychronous rectification,  
and other applications lowest Rds(on) is required.  
32A, 120V, R  
= 0.05@V = 10 V  
DS(on) GS  
Low gate charge ( typical 41 nC)  
Low Crss ( typical 70 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
"
! "  
"
"
G !  
I2-PAK  
D2-PAK  
FQB Series  
G
S
FQI Series  
!
S
G D S  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB32N12V2/FQI32N12V2  
Units  
V
V
I
Drain-Source Voltage  
120  
32  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
23  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
128  
± 30  
439  
32  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
15  
mJ  
V/ns  
W
AR  
dv/dt  
4.5  
Power Dissipation (T = 25°C) *  
3.75  
150  
1
A
P
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.0  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
40  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  

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