Datasheet > FQI32N20C

FQI32N20C

更新时间： 2024-11-03 22:25:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	911K
描述
200V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQI32N20C 数据手册

QFET^®

FQB32N20C/FQI32N20C

200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

Features

•

28A, 200V, R_DS(on)= 0.082Ω @V_GS= 10 V

Low gate charge ( typical 82.5 nC)

Low Crss ( typical 185 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

{

●

◀

▲

●

I²-PAK

{

D²-PAK

FQI Series

FQB Series

G D S

{

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

V_DSS

Parameter

FQB32N20C / FQI32N20C

Units

Drain-Source Voltage

Drain Current

200

28.0

17.8

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

I_DM

(Note 1)

Drain Current

112

V_GSS

E_AS

I_AR

E_AR

dv/dt

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25°C)*

± 30

955

28.0

15.6

5.5

3.13

156

V/ns

(Note 2)

(Note 1)

(Note 3)

P_D

Power Dissipation (T_C= 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

1.25

-55 to +150

W/°C

°C

T_J, T_STG

T_L

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.8

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, March 2004

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQI32N20C相关器件

型号	品牌	获取价格	描述	数据表
FQI33N10	FAIRCHILD	获取价格	100V N-Channel MOSFET
FQI33N10L	FAIRCHILD	获取价格	100V LOGIC N-Channel MOSFET
FQI33N10TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me
FQI34N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQI34N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQI34P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQI34P10TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, M
FQI34P10TU_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, M
FQI3N25	FAIRCHILD	获取价格	250V N-Channel MOSFET
FQI3N25TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.8A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met