型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI3N80 | FAIRCHILD |
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800V N-Channel MOSFET | |
FQI3N80TU | FAIRCHILD |
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Power Field-Effect Transistor, 3A I(D), 800V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o | |
FQI3N90 | FAIRCHILD |
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900V N-Channel MOSFET | |
FQI3N90TU | FAIRCHILD |
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Power Field-Effect Transistor, 3.6A I(D), 900V, 4.25ohm, 1-Element, N-Channel, Silicon, Me | |
FQI3P20 | FAIRCHILD |
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200V P-Channel MOSFET | |
FQI3P20TU | ROCHESTER |
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2.8A, 200V, 2.7ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI3P20TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.8A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Met | |
FQI3P50 | FAIRCHILD |
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500V P-Channel MOSFET | |
FQI44N08 | FAIRCHILD |
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80V N-Channel MOSFET | |
FQI44N08TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 44A I(D), 80V, 0.034ohm, 1-Element, N-Channel, Silicon, Met |