是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
雪崩能效等级(Eas): | 2200 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 33.5 A |
最大漏源导通电阻: | 0.06 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 134 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI3N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQI3N25TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.8A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQI3N25TU | ROCHESTER |
获取价格 |
2.8A, 250V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI3N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET | |
FQI3N30TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.2A I(D), 300V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQI3N40 | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQI3N60 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQI3N80 | FAIRCHILD |
获取价格 |
800V N-Channel MOSFET | |
FQI3N80TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 800V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o | |
FQI3N90 | FAIRCHILD |
获取价格 |
900V N-Channel MOSFET |