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FQI34P10TU_NL PDF预览

FQI34P10TU_NL

更新时间: 2024-11-18 13:07:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 718K
描述
Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, I2PAK-3

FQI34P10TU_NL 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84Is Samacsys:N
雪崩能效等级(Eas):2200 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):33.5 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):134 A
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQI34P10TU_NL 数据手册

 浏览型号FQI34P10TU_NL的Datasheet PDF文件第2页浏览型号FQI34P10TU_NL的Datasheet PDF文件第3页浏览型号FQI34P10TU_NL的Datasheet PDF文件第4页浏览型号FQI34P10TU_NL的Datasheet PDF文件第5页浏览型号FQI34P10TU_NL的Datasheet PDF文件第6页浏览型号FQI34P10TU_NL的Datasheet PDF文件第7页 
®
QFET  
FQB34P10 / FQI34P10  
100V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
-33.5A, -100V, R  
= 0.06@V = -10 V  
DS(on) GS  
Low gate charge ( typical 85 nC)  
Low Crss ( typical 170 pF)  
Fast switching  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as audio amplifier,  
high efficiency switching DC/DC converters, and DC motor  
control.  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
S
!
D
G
!
I2-PAK  
FQI Series  
D2-PAK  
FQB Series  
G
S
G D S  
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB34P10 / FQI34P10  
Units  
V
A
A
A
V
I
Drain-Source Voltage  
Drain Current  
-100  
-33.5  
-23.5  
-134  
DSS  
- Continuous (T = 25°C)  
D
C
- Continuous (T = 100°C)  
C
I
(Note 1)  
Drain Current  
- Pulsed  
DM  
V
E
I
E
dv/dt  
Gate-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (T = 25°C) *  
± 25  
V
mJ  
A
mJ  
V/ns  
W
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
2200  
-33.5  
15.5  
-6.0  
3.75  
AR  
AR  
P
A
D
Power Dissipation (T = 25°C)  
155  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.03  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
--  
Max  
0.97  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2004 Fairchild Semiconductor Corporation  
Rev. B, June 2004  

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