Datasheet > FQI47P06

FQI47P06

更新时间： 2024-11-03 22:15:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	721K
描述
60V P-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQI47P06 数据手册

May 2001

QFET

FQB47P06 / FQI47P06

60V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

DC/DC converters, and high efficiency switching for power

management in portable and battery operated products.

•

-47A, -60V, R

= 0.026Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 84 nC)

Low Crss ( typical 320 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

●

▶

▲

●

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB47P06 / FQI47P06

Units

Drain-Source Voltage

-60

-47

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-33.2

-188

± 25

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

820

-47

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

-7.0

Power Dissipation (T = 25°C) *

3.75

160

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

1.06

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.94

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A2. May 2001

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQI47P06相关器件

型号	品牌	获取价格	描述	数据表
FQI47P06TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Met
FQI4N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQI4N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQI4N25	FAIRCHILD	获取价格	250V N-Channel MOSFET
FQI4N25TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Me
FQI4N50	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQI4N50TU	FAIRCHILD	获取价格	暂无描述
FQI4N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQI4N60TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Met
FQI4N80	FAIRCHILD	获取价格	800V N-Channel MOSFET