是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262AA | 包装说明: | I2PAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.27 |
雪崩能效等级(Eas): | 40 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 2.8 A |
最大漏极电流 (ID): | 2.8 A | 最大漏源导通电阻: | 2.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 45 W |
最大脉冲漏极电流 (IDM): | 11.2 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI3N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET | |
FQI3N30TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.2A I(D), 300V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQI3N40 | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQI3N60 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQI3N80 | FAIRCHILD |
获取价格 |
800V N-Channel MOSFET | |
FQI3N80TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 800V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o | |
FQI3N90 | FAIRCHILD |
获取价格 |
900V N-Channel MOSFET | |
FQI3N90TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 900V, 4.25ohm, 1-Element, N-Channel, Silicon, Me | |
FQI3P20 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET | |
FQI3P20TU | ROCHESTER |
获取价格 |
2.8A, 200V, 2.7ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 |