Datasheet > FQI34N20L

FQI34N20L

更新时间： 2024-11-05 22:13:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	663K
描述
200V LOGIC N-Channel MOSFET

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FQI34N20L 数据手册

June 2000

QFET

FQB34N20L / FQI34N20L

200V LOGIC N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supply, motor control.

•

31A, 200V, R

= 0.075Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 55 nC)

Low Crss ( typical 52 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

Low level gate drive requirement allowing direct

opration from logic drivers

! "

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB34N20L / FQI34N20L

Units

Drain-Source Voltage

200

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

124

Gate-Source Voltage

± 20

640

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C) *

3.13

180

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

1.43

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.7

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, June 2000

12 3 4 5 6 7...9

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