Datasheet > FQI2P40

FQI2P40

更新时间： 2024-11-17 22:25:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	589K
描述
400V P-Channel MOSFET

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FQI2P40 数据手册

December 2000

QFET

FQB2P40 / FQI2P40

400V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

-2.0A, -400V, R

= 6.5Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 10 nC)

Low Crss ( typical 6.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for electronic lamp ballasts based on the

complementary half bridge topology.

●

▶

▲

●

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB2P40 / FQI2P40

Units

Drain-Source Voltage

-400

-2.0

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-1.27

-8.0

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

120

-2.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

6.3

V/ns

dv/dt

-4.5

Power Dissipation (T = 25°C) *

3.13

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.51

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.98

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A2, December 2000

12 3 4 5 6 7...9

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