FQI2NA90

更新时间： 2024-11-03 22:25:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	709K
描述
900V N-Channel MOSFET

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数据手册

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FQI2NA90 数据手册

September 2000

QFET

FQB2NA90 / FQI2NA90

900V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

•

2.8A, 900V, R_DS(on)= 5.8 Ω @ V_GS= 10 V

Low gate charge ( typical 15 nC)

Low Crss ( typical 6.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

V_DSS

Parameter

FQB2NA90 / FQI2NA90

Units

Drain-Source Voltage

900

2.8

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

1.77

11.2

I_DM

(Note 1)

Drain Current

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 30

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

310

2.8

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25°C) *

10.7

4.0

V/ns

3.13

107

Power Dissipation (T_C= 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.85

-55 to +150

W/°C

°C

T_J, T_STG

T_L

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.17

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, September 2000

12 3 4 5 6 7...9

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