FQI28N15

更新时间： 2024-11-05 22:25:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	630K
描述
150V N-Channel MOSFET

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FQI28N15 数据手册

December 2000

QFET

FQB28N15 / FQI28N15

150V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

28A, 150V, R

= 0.09Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 40 nC)

Low Crss ( typical 50 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as audio

amplifiers, high efficiency switching for DC/DC converters,

DC motor control, and uninterrupted power supplies.

175°C maximum junction temperature rating

! "

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB28N15 / FQI28N15

Units

Drain-Source Voltage

150

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

19.8

112

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 25

300

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

16.8

5.5

V/ns

dv/dt

Power Dissipation (T = 25°C) *

3.75

168

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

1.12

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.89

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A2, December 2000

12 3 4 5 6 7...9

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与FQI28N15相关器件

型号	品牌	获取价格	描述	数据表
FQI28N15TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
FQI2N30	FAIRCHILD	获取价格	300V N-Channel MOSFET
FQI2N30TU	ROCHESTER	获取价格	2.1A, 300V, 3.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
FQI2N50	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQI2N50TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.1A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Met
FQI2N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQI2N60TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Met
FQI2N80	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQI2N90	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQI2N90TU	ROCHESTER	获取价格	2.2A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3