型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI28N15TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met | |
FQI2N30 | FAIRCHILD |
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300V N-Channel MOSFET | |
FQI2N30TU | ROCHESTER |
获取价格 |
2.1A, 300V, 3.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI2N50 | FAIRCHILD |
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500V N-Channel MOSFET | |
FQI2N50TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Met | |
FQI2N60 | FAIRCHILD |
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600V N-Channel MOSFET | |
FQI2N60TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Met | |
FQI2N80 | FAIRCHILD |
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800V N-Channel MOSFET | |
FQI2N90 | FAIRCHILD |
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900V N-Channel MOSFET | |
FQI2N90TU | ROCHESTER |
获取价格 |
2.2A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 |