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FQI28N15

更新时间: 2024-11-03 22:25:23
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飞兆/仙童 - FAIRCHILD /
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9页 630K
描述
150V N-Channel MOSFET

FQI28N15 数据手册

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December 2000  
TM  
QFET  
FQB28N15 / FQI28N15  
150V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
28A, 150V, R  
= 0.09@V = 10 V  
DS(on) GS  
Low gate charge ( typical 40 nC)  
Low Crss ( typical 50 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology is especially tailored to minimize  
on-state  
resistance,  
provide  
superior  
switching  
performance, and withstand high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as audio  
amplifiers, high efficiency switching for DC/DC converters,  
DC motor control, and uninterrupted power supplies.  
175°C maximum junction temperature rating  
D
!
D
"
! "  
"
!
G
"
G
S
D2-PAK  
FQB Series  
I2-PAK  
FQI Series  
G
D
S
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB28N15 / FQI28N15  
Units  
V
V
I
Drain-Source Voltage  
150  
28  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
19.8  
112  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
300  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
28  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
16.8  
5.5  
mJ  
V/ns  
W
AR  
dv/dt  
Power Dissipation (T = 25°C) *  
3.75  
168  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.12  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
0.89  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2000 Fairchild Semiconductor International  
Rev. A2, December 2000  

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