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FQI22P10TU PDF预览

FQI22P10TU

更新时间: 2024-11-04 20:07:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
13页 702K
描述
Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

FQI22P10TU 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
雪崩能效等级(Eas):710 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):22 A
最大漏极电流 (ID):22 A最大漏源导通电阻:0.125 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):88 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQI22P10TU 数据手册

 浏览型号FQI22P10TU的Datasheet PDF文件第2页浏览型号FQI22P10TU的Datasheet PDF文件第3页浏览型号FQI22P10TU的Datasheet PDF文件第4页浏览型号FQI22P10TU的Datasheet PDF文件第5页浏览型号FQI22P10TU的Datasheet PDF文件第6页浏览型号FQI22P10TU的Datasheet PDF文件第7页 
November 2001  
FQB22P10 / FQI22P10  
100V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as audio amplifier,  
high efficiency switching DC/DC converters, and DC motor  
control.  
-22A, -100V, R  
= 0.125@V = -10 V  
DS(on) GS  
Low gate charge ( typical 40 nC)  
Low Crss ( typical 160 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
S
!
D
G!  
G
S
D2-PAK  
FQB Series  
I2-PAK  
FQI Series  
G D S  
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB22P10 / FQI22P10  
Units  
V
V
I
Drain-Source Voltage  
-100  
-22  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
-15.6  
-88  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
±25  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
710  
mJ  
A
AS  
-22  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
12.5  
mJ  
V/ns  
W
AR  
dv/dt  
-6.0  
Power Dissipation (T = 25°C) *  
3.75  
P
A
D
Power Dissipation (T = 25°C)  
125  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.83  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.2  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
40  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. B, November 2001  

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