是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262 | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
雪崩能效等级(Eas): | 710 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 22 A |
最大漏极电流 (ID): | 22 A | 最大漏源导通电阻: | 0.125 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 125 W |
最大脉冲漏极电流 (IDM): | 88 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI24N08 | FAIRCHILD |
获取价格 |
80V N-Channel MOSFET | |
FQI26N03L | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 26A I(D) | TO-263 | |
FQI26N03LTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
FQI27N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQI27N25TU | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQI27N25TU | ROCHESTER |
获取价格 |
25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI27N25TU | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,250 V,25.5 A,110 mΩ,I2PA | |
FQI27N25TU_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, M | |
FQI27N25TU-F085 | ONSEMI |
获取价格 |
N 沟道,MOSFET,250V,25.5A,131mΩ | |
FQI27P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET |