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FQI26N03LTU PDF预览

FQI26N03LTU

更新时间: 2024-11-19 04:53:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 653K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

FQI26N03LTU 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.92
配置:Single最大漏极电流 (Abs) (ID):26 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

FQI26N03LTU 数据手册

 浏览型号FQI26N03LTU的Datasheet PDF文件第2页浏览型号FQI26N03LTU的Datasheet PDF文件第3页浏览型号FQI26N03LTU的Datasheet PDF文件第4页浏览型号FQI26N03LTU的Datasheet PDF文件第5页浏览型号FQI26N03LTU的Datasheet PDF文件第6页浏览型号FQI26N03LTU的Datasheet PDF文件第7页 
May 2001  
TM  
QFET  
FQB26N03L / FQI26N03L  
30V LOGIC N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as DC/DC  
converters, high efficiency switching for power  
management in portable and battery operated products.  
26A, 30V, R  
= 0.037@V = 10 V  
DS(on) GS  
Low gate charge ( typical 8.0 nC)  
Low Crss ( typical 60 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
D
!
D
"
! "  
"
!
G
"
G
S
D2-PAK  
FQB Series  
I2-PAK  
FQI Series  
G
D
S
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB26N03L / FQI26N03L  
Units  
V
V
I
Drain-Source Voltage  
30  
26  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
18.4  
104  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 20  
150  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
26  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
5.0  
mJ  
V/ns  
W
AR  
dv/dt  
7.0  
Power Dissipation (T = 25°C) *  
3.75  
50  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.33  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8” from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
3.0  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
40  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. A1. May 2001  

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