是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.92 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 26 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 50 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI27N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQI27N25TU | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQI27N25TU | ROCHESTER |
获取价格 |
25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI27N25TU | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,250 V,25.5 A,110 mΩ,I2PA | |
FQI27N25TU_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, M | |
FQI27N25TU-F085 | ONSEMI |
获取价格 |
N 沟道,MOSFET,250V,25.5A,131mΩ | |
FQI27P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQI27P06TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Meta | |
FQI28N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQI28N15TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met |