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FQI27N25TU_F085

更新时间： 2024-09-16 21:14:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
7页 450K
描述
Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, I2PAK-3

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FQI27N25TU_F085 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-262
包装说明：ROHS COMPLIANT, I2PAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：8.51
雪崩能效等级（Eas）：600 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：25.5 A
最大漏极电流 (ID)：25.5 A最大漏源导通电阻：0.11 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSIP-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：180 W最大脉冲漏极电流 (IDM)：102 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FQI27N25TU_F085 数据手册

 浏览型号FQI27N25TU_F085的Datasheet PDF文件第2页浏览型号FQI27N25TU_F085的Datasheet PDF文件第3页浏览型号FQI27N25TU_F085的Datasheet PDF文件第4页浏览型号FQI27N25TU_F085的Datasheet PDF文件第5页浏览型号FQI27N25TU_F085的Datasheet PDF文件第6页浏览型号FQI27N25TU_F085的Datasheet PDF文件第7页 
May 2014  
FQB27N25TM_F085/FQI27N25TU_F085  
N-Channel MOSFET  
D
250 V, 25.5 A, 131 mΩ  
Features  
„ Typ R  
= 108mΩ at V = 10V, I = 25.5A  
GS D  
DS(on)  
„ Typ Q  
= 45nC at V = 10V, I = 27A  
g(tot)  
GS  
D
G
S
„ UIS Capability  
D
TO-263AB  
„ RoHS Compliant  
„ Qualified to AEC Q101  
TO-262AB  
Applications  
„ Automotive Engine Control  
„ Powertrain Management  
„ Solenoid and Motor Drivers  
„ Electronic Steering  
G
S
„ Integrated Starter/Alternator  
For current package drawing, please refer to the Fairchild  
website at www.fairchildsemi.com/packaging  
„ Distributed Power Architectures and VRM  
„ Primary Switch for 12V Systems  
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted  
Symbol  
VDSS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
250  
±30  
V
V
VGS  
Drain Current - Continuous (VGS=10) (Note 1)  
Pulsed Drain Current  
TC = 25°C  
TC = 25°C  
25.5  
ID  
A
See Figure 4  
972  
EAS  
PD  
Single Pulse Avalanche Energy  
(Note 2)  
(Note 3)  
mJ  
W
W/oC  
oC  
oC/W  
oC/W  
Power Dissipation  
Derate above 25oC  
417  
3.3  
TJ, TSTG Operating and Storage Temperature  
-55 to + 150  
0.3  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Maximum Thermal Resistance, Junction to Ambient  
43  
Package Marking and Ordering Information  
Device Marking  
FQB27N25TM  
FQI27N25TU  
Device  
Package  
TO-263AB  
TO-262AB  
Reel Size  
330mm  
Tube  
Tape Width  
Quantity  
FQB27N25TM_F085  
FQI27N25TU_F085  
24mm  
N/A  
800 units  
50 units  
Notes:  
1: Current is limited by bondwire configuration.  
2: Starting T = 25°C, L = 4.67mH, I = 20.4A, V = 100V during inductor charging and V = 0V during time in avalanche.  
J
AS  
DD  
DD  
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder  
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum  
2
rating presented here is based on mounting on a 1 in pad of 2oz copper.  
©2014 Fairchild Semiconductor Corporation  
1
www.fairchildsemi.com  
FQB27N25TM_F085/FQI27N25TU_F085 Rev. C1  
1234567

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