是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-262 |
包装说明: | ROHS COMPLIANT, I2PAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 8.51 |
雪崩能效等级(Eas): | 600 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 25.5 A |
最大漏极电流 (ID): | 25.5 A | 最大漏源导通电阻: | 0.11 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 180 W | 最大脉冲漏极电流 (IDM): | 102 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI27N25TU-F085 | ONSEMI |
获取价格 |
N 沟道,MOSFET,250V,25.5A,131mΩ | |
FQI27P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQI27P06TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Meta | |
FQI28N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQI28N15TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met | |
FQI2N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET | |
FQI2N30TU | ROCHESTER |
获取价格 |
2.1A, 300V, 3.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI2N50 | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET | |
FQI2N50TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Met | |
FQI2N60 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET |