Datasheet > FQI27N25TU-F085

FQI27N25TU-F085

更新时间： 2024-11-05 11:13:03

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
8页	511K
描述
N 沟道，MOSFET，250V，25.5A，131mΩ

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FQI27N25TU-F085 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	IN-LINE, R-PSIP-T3	Reach Compliance Code：	not_compliant
风险等级：	6.2	雪崩能效等级（Eas）：	600 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	250 V
最大漏极电流 (Abs) (ID)：	25.5 A	最大漏极电流 (ID)：	25.5 A
最大漏源导通电阻：	0.11 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSIP-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	180 W
最大脉冲漏极电流 (IDM)：	102 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FQI27N25TU-F085 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

12 3 4 5 6 7 8

中文翻译

下载PDF

与FQI27N25TU-F085相关器件

型号	品牌	获取价格	描述	数据表
FQI27P06	FAIRCHILD	获取价格	60V P-Channel MOSFET
FQI27P06TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Meta
FQI28N15	FAIRCHILD	获取价格	150V N-Channel MOSFET
FQI28N15TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
FQI2N30	FAIRCHILD	获取价格	300V N-Channel MOSFET
FQI2N30TU	ROCHESTER	获取价格	2.1A, 300V, 3.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
FQI2N50	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQI2N50TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.1A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Met
FQI2N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQI2N60TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Met

与FQI27N25TU-F085相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

FQI27N25TU-F085

FQI27N25TU-F085 技术参数

FQI27N25TU-F085 数据手册

与FQI27N25TU-F085相关器件

与FQI27N25TU-F085相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FQI27N25TU-F085

FQI27N25TU-F085 技术参数

FQI27N25TU-F085 数据手册

与FQI27N25TU-F085相关器件

与FQI27N25TU-F085相关文章

您还可以找

您在本页遇到什么问题？