Datasheet > FQI27N25TU-F085

FQI27N25TU-F085

更新时间： 2024-11-19 11:13:03

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
8页	511K
描述
N 沟道，MOSFET，250V，25.5A，131mΩ

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FQI27N25TU-F085 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	IN-LINE, R-PSIP-T3	Reach Compliance Code：	not_compliant
风险等级：	6.2	雪崩能效等级（Eas）：	600 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	250 V
最大漏极电流 (Abs) (ID)：	25.5 A	最大漏极电流 (ID)：	25.5 A
最大漏源导通电阻：	0.11 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSIP-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	180 W
最大脉冲漏极电流 (IDM)：	102 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FQI27N25TU-F085 数据手册

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To learn more about onsemi™, please visit our website at

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

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for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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与FQI27N25TU-F085相关器件

型号	品牌	获取价格	描述	数据表
FQI27P06	FAIRCHILD	获取价格	60V P-Channel MOSFET
FQI27P06TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Meta
FQI28N15	FAIRCHILD	获取价格	150V N-Channel MOSFET
FQI28N15TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
FQI2N30	FAIRCHILD	获取价格	300V N-Channel MOSFET
FQI2N30TU	ROCHESTER	获取价格	2.1A, 300V, 3.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
FQI2N50	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQI2N50TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.1A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Met
FQI2N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQI2N60TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Met

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