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FQI27N25TU PDF预览

FQI27N25TU

更新时间： 2024-11-19 11:14:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 1014K
描述
功率 MOSFET，N 沟道，QFET®，250 V，25.5 A，110 mΩ，I2PAK

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中文翻译

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FQI27N25TU 技术参数

是否无铅：不含铅生命周期：Active
包装说明：IN-LINE, R-PSIP-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：1.52
Is Samacsys：N雪崩能效等级（Eas）：600 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (Abs) (ID)：25.5 A最大漏极电流 (ID)：25.5 A
最大漏源导通电阻：0.11 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-262AAJESD-30 代码：R-PSIP-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：180 W最大脉冲漏极电流 (IDM)：102 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FQI27N25TU 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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FQI27N25TU-F085 ONSEMI

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FQI27P06 FAIRCHILD

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 		60V P-Channel MOSFET
FQI27P06TU FAIRCHILD

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 		Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Meta
FQI28N15 FAIRCHILD

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 		150V N-Channel MOSFET
FQI28N15TU FAIRCHILD

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 		Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
FQI2N30 FAIRCHILD

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 		300V N-Channel MOSFET
FQI2N30TU ROCHESTER

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 		2.1A, 300V, 3.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
FQI2N50 FAIRCHILD

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 		500V N-Channel MOSFET
FQI2N50TU FAIRCHILD

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 		Power Field-Effect Transistor, 2.1A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Met

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