生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
雪崩能效等级(Eas): | 433 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 19 A |
最大漏极电流 (ID): | 19 A | 最大漏源导通电阻: | 0.17 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 139 W | 最大脉冲漏极电流 (IDM): | 76 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI19N20L | FAIRCHILD |
获取价格 |
200V LOGIC N_Channel MOSFET | |
FQI1N60 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQI1N60TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Me | |
FQI1P50 | FAIRCHILD |
获取价格 |
500V P-Channel MOSFET | |
FQI20N06 | FAIRCHILD |
获取价格 |
60V N-Channel MOSFET | |
FQI20N06L | FAIRCHILD |
获取价格 |
60V LOGIC N-Channel MOSFET | |
FQI20N06TU | FAIRCHILD |
获取价格 |
暂无描述 | |
FQI22N30 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263 | |
FQI22P10 | FAIRCHILD |
获取价格 |
100V P-Channel MOSFET | |
FQI22P10TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Me |