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FQI19N20C PDF预览

FQI19N20C

更新时间: 2024-11-03 21:54:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 876K
描述
200V N-Channel MOSFET

FQI19N20C 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
雪崩能效等级(Eas):433 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):19 A
最大漏极电流 (ID):19 A最大漏源导通电阻:0.17 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):139 W最大脉冲漏极电流 (IDM):76 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQI19N20C 数据手册

 浏览型号FQI19N20C的Datasheet PDF文件第2页浏览型号FQI19N20C的Datasheet PDF文件第3页浏览型号FQI19N20C的Datasheet PDF文件第4页浏览型号FQI19N20C的Datasheet PDF文件第5页浏览型号FQI19N20C的Datasheet PDF文件第6页浏览型号FQI19N20C的Datasheet PDF文件第7页 
QFET®  
FQB19N20C/FQI19N20C  
200V N-Channel MOSFET  
General Description  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
Features  
19.0A, 200V, RDS(on) = 0.17@VGS = 10 V  
Low gate charge ( typical 40.5 nC)  
Low Crss ( typical 85 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction, electronic lamp ballasts  
based on half bridge topology.  
D
{
D
G{  
I2-PAK  
D2-PAK  
G
S
FQI Series  
FQB Series  
G D S  
{
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQB19N20C / FQI19N20C  
Units  
V
A
A
A
Drain-Source Voltage  
Drain Current  
200  
19.0  
12.1  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
IDM  
(Note 1)  
Drain Current  
76.0  
VGSS  
EAS  
IAR  
EAR  
dv/dt  
Gate-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25°C)*  
± 30  
433  
19.0  
13.9  
5.5  
3.13  
139  
V
mJ  
A
mJ  
V/ns  
W
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
PD  
Power Dissipation (TC = 25°C)  
W
- Derate above 25°C  
Operating and Storage Temperature Range  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
1.11  
-55 to +150  
W/°C  
°C  
TJ, TSTG  
TL  
300  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
--  
Max  
0.9  
40  
Units  
°C/W  
°C/W  
°C/W  
RθJC  
RθJA  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient*  
Thermal Resistance, Junction-to-Ambient  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2004 Fairchild Semiconductor Corporation  
Rev. A, March 2004  

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