型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI22P10 | FAIRCHILD |
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100V P-Channel MOSFET | |
FQI22P10TU | FAIRCHILD |
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Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Me | |
FQI24N08 | FAIRCHILD |
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80V N-Channel MOSFET | |
FQI26N03L | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 26A I(D) | TO-263 | |
FQI26N03LTU | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
FQI27N25 | FAIRCHILD |
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250V N-Channel MOSFET | |
FQI27N25TU | FAIRCHILD |
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250V N-Channel MOSFET | |
FQI27N25TU | ROCHESTER |
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25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI27N25TU | ONSEMI |
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功率 MOSFET,N 沟道,QFET®,250 V,25.5 A,110 mΩ,I2PA | |
FQI27N25TU_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, M |