Datasheet > FQI17P10

FQI17P10

更新时间： 2024-11-17 22:23:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	677K
描述
100V P-Channel MOSFET

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FQI17P10 数据手册

QFET

FQB17P10 / FQI17P10

100V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

•

-16.5A, -100V, R

= 0.19Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 30 nC)

Low Crss ( typical 100 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

D²-PAK

FQB Series

I²-PAK

FQI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB17P10 / FQI17P10

Units

Drain-Source Voltage

-100

-16.5

-11.7

-66

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

580

-16.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

-6.0

Power Dissipation (T = 25°C) *

3.75

Power Dissipation (T = 25°C)

100

- Derate above 25°C

Operating and Storage Temperature Range

0.67

W/°C

°C

T , T

-55 to +175

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.5

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B, August 2002

12 3 4 5 6 7...9

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