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FQI16N25C PDF预览

FQI16N25C

更新时间: 2024-11-19 22:32:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 871K
描述
250V N-Channel MOSFET

FQI16N25C 数据手册

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QFET®  
FQB16N25C/FQI16N25C  
250V N-Channel MOSFET  
General Description  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
Features  
15.6A, 250V, RDS(on) = 0.27@VGS = 10 V  
Low gate charge ( typical 41 nC)  
Low Crss ( typical 68 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters,  
switch mode power supplies, DC-AC converters for  
uninterrupted power supplies and motor controls.  
D
{
D
G{  
I2-PAK  
D2-PAK  
G
S
FQI Series  
FQB Series  
G D S  
{
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQB16N25C / FQI16N25C  
Units  
V
A
A
A
Drain-Source Voltage  
Drain Current  
250  
15.6  
9.8  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
IDM  
(Note 1)  
Drain Current  
62.4  
VGSS  
EAS  
IAR  
EAR  
dv/dt  
Gate-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25°C)*  
± 30  
410  
15.6  
13.9  
5.5  
3.13  
139  
V
mJ  
A
mJ  
V/ns  
W
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
PD  
Power Dissipation (TC = 25°C)  
W
- Derate above 25°C  
Operating and Storage Temperature Range  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
1.11  
-55 to +150  
W/°C  
°C  
TJ, TSTG  
TL  
300  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
--  
Max  
0.9  
40  
Units  
°C/W  
°C/W  
°C/W  
RθJC  
RθJA  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient*  
Thermal Resistance, Junction-to-Ambient  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2004 Fairchild Semiconductor Corporation  
Rev. A, March 2004  

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