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FQI15P12 PDF预览

FQI15P12

更新时间: 2024-11-20 22:32:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 653K
描述
120V P-Channel MOSFET

FQI15P12 数据手册

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®
QFET  
FQB15P12 / FQI15P12  
120V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as audio amplifier,  
high efficiency switching DC/DC converters, and DC motor  
control.  
-15A, -120V, R  
= 0.2@V = -10 V  
DS(on) GS  
Low gate charge ( typical 29 nC)  
Low Crss ( typical 110 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
S
!
D
G!  
I2-PAK  
FQI Series  
D2-PAK  
FQB Series  
G
S
G D S  
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB15P12 / FQI15P12  
Units  
V
V
I
Drain-Source Voltage  
-120  
-15  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
-10.6  
-60  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
1157  
-15  
mJ  
A
AS  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
10  
mJ  
V/ns  
W
AR  
dv/dt  
-5.0  
Power Dissipation (T = 25°C) *  
3.75  
100  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.67  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.5  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
40  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  

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