®
QFET
FQB15P12 / FQI15P12
120V P-Channel MOSFET
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
•
•
•
•
•
•
•
-15A, -120V, R
= 0.2Ω @V = -10 V
DS(on) GS
Low gate charge ( typical 29 nC)
Low Crss ( typical 110 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
S
!
D
●
●
G!
▶
▲
I2-PAK
FQI Series
●
D2-PAK
FQB Series
G
S
G D S
!
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQB15P12 / FQI15P12
Units
V
V
I
Drain-Source Voltage
-120
-15
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
-10.6
-60
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 30
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
1157
-15
mJ
A
AS
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
10
mJ
V/ns
W
AR
dv/dt
-5.0
Power Dissipation (T = 25°C) *
3.75
100
P
A
D
Power Dissipation (T = 25°C)
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.67
-55 to +175
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
1.5
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
θJC
θJA
θJA
--
40
--
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003