生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.72 | 雪崩能效等级(Eas): | 810 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 12.5 A | 最大漏源导通电阻: | 0.43 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 50 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI13N50C | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET | |
FQI13N50CTU | ONSEMI |
获取价格 |
N 沟道 QFET® MOSFET 500V,13A,480mΩ | |
FQI13N50CTU | ROCHESTER |
获取价格 |
13A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, LEAD FREE, I2PAK-3 | |
FQI140N03L | FAIRCHILD |
获取价格 |
30V LOGIC N-Channel MOSFET | |
FQI140N03LTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Me | |
FQI14N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQI14N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET | |
FQI15P12 | FAIRCHILD |
获取价格 |
120V P-Channel MOSFET | |
FQI16N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQI16N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET |