Datasheet > FQI13N06

FQI13N06

更新时间： 2024-11-03 22:25:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	674K
描述
60V N-Channel MOSFET

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FQI13N06 数据手册

May 2001

QFET

FQB13N06 / FQI13N06

60V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as DC/DC

converters, high efficiency switching for power

management in portable and battery operated products.

•

13A, 60V, R

= 0.135Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 5.8 nC)

Low Crss ( typical 15 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

! "

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB13N06 / FQI13N06

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

9.2

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 25

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.5

V/ns

dv/dt

7.0

Power Dissipation (T = 25°C) *

3.75

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.3

W/°C

°C

T , T

-55 to +175

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

3.35

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A1. May 2001

12 3 4 5 6 7...9

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