Datasheet > FQI12N50

FQI12N50

更新时间： 2024-09-14 22:25:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	618K
描述
500V N-Channel MOSFET

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FQI12N50 数据手册

QFET

FQB12N50 / FQI12N50

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies,

power factor correction, electronic lamp ballasts based on

half bridge.

•

12.1A, 500V, R

= 0.49Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 39 nC)

Low Crss ( typical 25 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

D²-PAK

FQB Series

I²-PAK

FQI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB12N50 / FQI12N50

Units

Drain-Source Voltage

500

12.1

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

7.6

(Note 1)

Drain Current

- Pulsed

48.4

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

878

12.1

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

17.9

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C) *

3.13

Power Dissipation (T = 25°C)

179

- Derate above 25°C

Operating and Storage Temperature Range

1.43

W/°C

°C

T , T

-55 to +150

stg

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.7

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, May 2002

12 3 4 5 6 7...9

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