是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, I2PAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.35 | 雪崩能效等级(Eas): | 700 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 9.5 A | 最大漏极电流 (ID): | 9.5 A |
最大漏源导通电阻: | 0.73 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 156 W |
最大脉冲漏极电流 (IDM): | 38 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI11N40 | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQI11N40C | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQI11N40TU | ROCHESTER |
获取价格 |
11.4A, 400V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI11P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQI11P06TU | ROCHESTER |
获取价格 |
11.4A, 60V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | |
FQI11P06TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, M | |
FQI12N20 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 11.6A I(D) | TO-262AA | |
FQI12N20L | FAIRCHILD |
获取价格 |
200V LOGIC N-Channel MOSFET | |
FQI12N20TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, M | |
FQI12N50 | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET |