生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.74 |
Is Samacsys: | N | 其他特性: | FAST SWITCHING |
雪崩能效等级(Eas): | 210 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 9.5 A |
最大漏源导通电阻: | 0.36 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 38 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQI10N20CTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Me | |
FQI10N20L | FAIRCHILD |
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200V LOGIC N-Channel MOSFET | |
FQI10N20LTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Met | |
FQI10N20TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Met | |
FQI10N60C | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
FQI10N60CTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Me | |
FQI10N60CTU | ROCHESTER |
获取价格 |
9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3 | |
FQI11N40 | FAIRCHILD |
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400V N-Channel MOSFET | |
FQI11N40C | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQI11N40TU | ROCHESTER |
获取价格 |
11.4A, 400V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 |