生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | IN-LINE, R-PDIP-T8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.67 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 0.54 A | 最大漏极电流 (ID): | 0.54 A |
最大漏源导通电阻: | 2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDIP-T8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大功率耗散 (Abs): | 1.4 W |
最大脉冲漏极电流 (IDM): | 4.32 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQG4904 | FAIRCHILD |
获取价格 |
400V Dual N & P-Channel MOSFET | |
FQG4904TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.46A I(D), 400V, 3ohm, 2-Element, N-Channel and P-Channel, | |
FQH140N10 | FAIRCHILD |
获取价格 |
100V N-Channel MOSFET | |
FQH18N50V2 | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET | |
FQH35N40 | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQH44N10 | FAIRCHILD |
获取价格 |
100V N-Channel MOSFET | |
FQH44N10_08 | FAIRCHILD |
获取价格 |
100V N-Channel MOSFET | |
FQH44N10_F133 | FAIRCHILD |
获取价格 |
100V N-Channel MOSFET | |
FQH44N10-133 | ONSEMI |
获取价格 |
Power Field-Effect Transistor | |
FQH44N10-F133 | ONSEMI |
获取价格 |
N 沟道 QFET® MOSFET 100V,48A,39mΩ |