FQG4904

更新时间： 2024-09-11 22:25:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
12页	1159K
描述
400V Dual N & P-Channel MOSFET

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FQG4904 数据手册

QFET

FQG4904

400V Dual N & P-Channel MOSFET

General Description

Features

These dual N and P-channel enhancement mode power

field effect transistors are produced using Fairchild’s

proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for electronic lamp ballast based on half bridge.

•

N-Channel 0.46A, 400V, R

P-Channel -0.46A, -400V, R

Low gate charge ( typical N-Channel 7.6 nC)

( typical P-Channel 20.0 nC)

Fast switching

= 3.0 Ω @ V = 10 V

DS(on) GS

= 3.0 Ω @ V = -10 V

DS(on)

•

Improved dv/dt capability

Pin #1

8-DIP

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

N-Channel

400

P-Channel

-400

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

DrainCurrent

0.46

-0.46

- Continuous (T = 100°C)

0.29

-0.29

(Note 1)

(Note 2)

DrainCurent

- Pulsed

3.68

-3.68

Gate-Source Voltage

± 30

GSS

dv/dt

Peak Diode Recovery dv/dt

4.5

-4.5

V/ns

Power Dissipation (T = 25°C)

1.6

- Derate above 25°C

Operating and Storage Temperature Range

0.013

W/°C

°C

T , T

-55 to +150

STG

Thermal Characteristics

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Ambient

(Note 5a)

°C/W

θJA

Rev. A1, April 2002

12 3 4 5 6 7...12

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