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FGB3040CS PDF预览

FGB3040CS

更新时间: 2024-09-21 11:15:03
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
10页 951K
描述
430 V、19 A、1.6 V、300 mJ、D2PAK、电流感测EcoSPARK® I、N 沟道点火 IGBT

FGB3040CS 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G6Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:1.38
Is Samacsys:N最大集电极电流 (IC):21 A
集电极-发射极最大电压:430 V配置:SINGLE
最大降落时间(tf):15000 ns门极发射器阈值电压最大值:2.2 V
门极-发射极最大电压:12 VJESD-30 代码:R-PSSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W认证状态:Not Qualified
最大上升时间(tr):7000 ns子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称断开时间 (toff):7300 ns标称接通时间 (ton):2100 ns
Base Number Matches:1

FGB3040CS 数据手册

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